摘要 :
In this article the phenomenology related to the mechanisms of defect generation in Shallow Trench Isolation (STI) processes is discussed, and the role of the structure pattern is investigated. Defect formation is studied by plan ...
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In this article the phenomenology related to the mechanisms of defect generation in Shallow Trench Isolation (STI) processes is discussed, and the role of the structure pattern is investigated. Defect formation is studied by plan and cross TEM analyses of wafers with different boron doses and after annealing at various temperatures. In addition, to obtain a wider statistics our analysis was extended by electrical measurements of defect-sensitive structures. It is shown that a modification of the STI flow suppresses the main mechanism of mechanical stress accumulation, hence stress-induced defects are eliminated. However, this approach is found to be critical from the point of view of the implantation damage recovery, specifically for what concerns the implantations carried out before the trench etch. This result can be explained by the role of the silicon surface in reducing the point defect excess generated in the implantation. As a consequence, in this example the presence of the STI structure is beneficial, in that it assists in annealing implantation-related defects. An attempt is also presented to model the evolution of implantation-induced defects by a Kinetic Monte Carlo code. The calculation results are
promising, though the capabilities of the model are limited by the computation time.
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摘要 :
A prototype Application Specific Integrated Circuit (ASIC) to read out signals from Silicon Drift Detector has been realised and characterised. The device is based on the ICARUS ASIC that is currently employed into the PICsIT dete...
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A prototype Application Specific Integrated Circuit (ASIC) to read out signals from Silicon Drift Detector has been realised and characterised. The device is based on the ICARUS ASIC that is currently employed into the PICsIT detector on board the INTEGRAL satellite http://astro.estec.esa.nl/Integral/integral.html. The first stage of the charge preamplifiers collecting the signals from the detectors is mounted externally to the ASIC. The ASIC functional behaviour is described and its performances are summarised and discussed.
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